1 elm35603ka - s 7 - elm 3 5 60 3 k a - s uses advanced trench technology to provide excellent rds (on) and low gate charge. g e neral description n-channel p-channel ? vds = 4 0v vds= - 4 0v ? id = 10 a id= - 7 a ? rds ( on ) < 2 2 m (vgs = 1 0 v) rds(on) < 33 m (vgs = - 1 0 v) ? rds(on) < 33 m (vgs = 7 v ) rds(on) < 40 m (vgs = - 7 v ) f eatures parameter symbol n-ch (max.) p-ch ( max.) unit note drain - s ource voltage vds 4 0 - 4 0 v gate - s ource v oltag e vgs 20 20 v conti nuous drain current ta = 25 c id 10 .0 - 7.0 a ta = 70 c 8.5 - 6.0 pulsed d rain current idm 5 0 - 5 0 a 3 power dissipation t c = 25 c pd 3 .0 3 .0 w t c = 70 c 2.1 2.1 j unction and storage temperature range t j , t s tg - 55 to 150 - 55 to 150 c maximum a bsolute ratings thermal characteristics parameter symbol device typ. max. unit note maximum junction - to - a mbient r ja n-ch 42 c /w maximum junction - to - c ase r jc n-ch 6 c /w maximum junction - to - a mbient r ja p -ch 42 c /w maximum junction - to - c ase r jc p -ch 6 c /w complementary mosfet 1 4 2 3 t a b c ircuit ? n- ch ? p - ch pin configuration t o -252- 4 (top vi ew) pin no. pin name 1 source1 2 gate 1 3 source 2 4 gate 2 tab drain1/ drain 2 s 2 g2 d2 s 1 g1 d1 t a = 25 c . u nless otherwise noted.
2 elm35603ka - s 7 - electrical characteristics (n-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - s ource breakdown voltage bv ds s id = 25 0 a , vgs = 0v 4 0 v zero g ate voltage drain current id ss vds = 32 v, vgs = 0v 1 a vds = 3 0 v, vgs = 0v, t a = 55 c 10 gate - b ody leakage current igss vds = 0v, vgs = 20 v 100 n a gate t hreshold voltage vgs (th) vds = vg s , id = 25 0 a 1.2 2.0 3.0 v on s tate drain current i d (on ) vgs = 10 v, vds = 5v 5 0 a 1 static drain - s ource on - r esistance rds (on ) vgs = 10 v, id = 10 a 19 22 m 1 vgs = 7 v, id = 7 a 25 33 forward transconductance gfs vds = 10 v, id = 10 a 25 s 1 diode forward voltage vsd i f = 10 a, vgs=0v 1.2 v 1 dynamic parameters input capacitance c iss vgs = 0v, vds = 1 0 v, f = 1mh z 1145 1450 pf output capacitance c oss 253 355 pf reverse transfer capacitance c r ss 94 142 pf switching parameters total gate charge q g vgs = 10 v, vds = 2 0 v, id = 10 a 23.0 nc 2 gate - s ource charge q gs 3.6 nc 2 gate - d rain charge q gd 3.0 nc 2 turn - o n delay time td (on) vgs = 10 v, vds = 2 0 v , id = 1a rgen = 6 3.2 6.4 ns 2 turn - o n rise t ime t r 10.8 21.7 ns 2 turn - o ff delay time td ( of f ) 17.1 30.8 ns 2 turn - o ff fall t ime t f 5.3 10.7 ns 2 body diode reverse recovery time t rr i f = 10 a, dif/dt = 100a / s 60 ns body diode reverse recovery charge qrr 43 nc note : 1. p ulse test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4 . duty cycle 1 %. complem entary mosfet t a = 25 c . u nless otherwise noted.
3 elm35603ka - s 7 - 4 may-03-2006 n- & p-channel enhancement mode field effect transistor p2204nd5g to-252-5 lead-free niko-sem body diode forward voltage variation with source current and temperature 25c t = 125c v - body diode forward voltage(v) is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55c 1.4 typical electrical and thermal characteristics (n-ch) complem entary mosfet
4 elm35603ka - s 7 - 5 may-03-2006 n- & p-channel enhancement mode field effect transistor p2204nd5g to-252-5 lead-free niko-sem complem entary mosfet
5 elm35603ka - s 7 - electrical characteristics (p-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - s ource breakdown voltage bv d ss id = - 25 0 a , vgs = 0v - 4 0 v zero g ate voltage drain current i ds s vds = - 32 v, vgs = 0v - 1 a vds = - 3 0 v, vgs = 0v, t a = 55 c -10 gate - b ody leakage current ig s s vds = 0v, vgs = 20 v 100 n a gate t hreshold voltage vgs (th) vds = vgs , id = - 25 0 a - 1.2 - 2.0 - 3.0 v on s tate drain current id (on ) vgs = - 10 v, vds = - 5v - 5 0 a 1 static drain - s ource on - r esistance rds (on ) vgs = - 10 v, id = - 7 a 28 33 m 1 vgs = - 7 v, id = - 5 a 32 40 forward transconductance gfs vds = - 10 v, id = - 7 a 18 s 1 diode forward voltage vsd i f = - 7 a, vgs = 0 v -1.2 v 1 dynamic parameters input capacitance c iss vgs = 0v, vds = - 1 0 v, f = 1mh z 1000 1260 pf output capacitance c oss 450 625 pf reverse transfer capacitance c r ss 108 163 pf switching parameters total gate charge q g vgs = - 10 v, vds = - 2 0 v id = - 7 a 20.0 nc 2 gate - s ource charge q gs 3.2 nc 2 gate - d rain charge q gd 2.7 nc 2 turn - o n delay time td (on) vgs = - 10 v, vds = - 2 0 v id = - 1a, rgen = 6 9.7 19.4 ns 2 turn - o n rise t ime t r 14.0 28.1 ns 2 turn - o ff delay time td ( of f ) 28.7 51.6 ns 2 turn - o ff fall t ime t f 17.8 32.2 ns 2 body diode reverse recovery time trr i f = - 7 a, dif/dt = 100a / s 80 ns body diode reverse recovery charge qrr 75 nc complem entary mosfet note : 1. p ulse test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. t a = 25 c . u nless otherwise noted.
6 elm35603ka - s 7 - 6 may-03-2006 n- & p-channel enhancement mode field effect transistor p2204nd5g to-252-5 lead-free niko-sem body diode forward voltage variation with source current and temperature 25c -v - body diode forward voltage(v) -is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 gs a t = 125c 1.0 0.8 1.2 -55c 1.4 typical electrical and thermal characteristics (p-ch) complem entary mosfet
7 elm35603ka - s 7 - 7 may-03-2006 n- & p-channel enhancement mode field effect transistor p2204nd5g to-252-5 lead-free niko-sem complem entary mosfet
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